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GAN063-650WSAQ

NEXPERIA OEM P/N：GAN063-650WSAQ
rohs compliant GANFET N-CH 650V 34.5A TO247-3

27,360 pcs

N/A

TO-247-3

$17.3485 (For reference only.)
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Specifications

Series - FET Type N-Channel
Technology GaNFET (Cascode Gallium Nitride FET) Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 34.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 25A, 10V Vgs(th) (Max) @ Id 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 400 V FET Feature -
Power Dissipation (Max) 143W (Ta) Operating Temperature -55°C ~ 175°C (TJ)
Grade - Qualification -
Mounting Type Through Hole Supplier Device Package TO-247-3
Package / Case TO-247-3

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