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Texas Instruments / CSD86336Q3DT
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CSD86336Q3DT
OEM P/N:CSD86336Q3DT
MOSFET 2N-CH 25V 20A 8VSON
In Stock Quantity
12,040 pcs
Lot code
N/A
Package
8-PowerTDFN
$0.782
(For reference only.)
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Specifications
Series
NexFET™
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Half Bridge)
FET Feature
Logic Level Gate, 5V Drive
Drain to Source Voltage (Vdss)
25V
Current - Continuous Drain (Id) @ 25°C
20A (Ta)
Rds On (Max) @ Id, Vgs
9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
Vgs(th) (Max) @ Id
1.9V @ 250µA, 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
3.8nC @ 45V, 7.4nC @ 45V
Input Capacitance (Ciss) (Max) @ Vds
494pF @ 12.5V, 970pF @ 12.5V
Power - Max
6W
Operating Temperature
-55°C ~ 125°C
Grade
-
Qualification
-
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
8-VSON (3.3x3.3)
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