Download Datasheet

CSD19531Q5AT

Texas Instruments OEM P/N：CSD19531Q5AT
rohs compliant MOSFET N-CH 100V 100A 8VSON

3,600 pcs

N/A

8-PowerTDFN

$1.163 (For reference only.)
QUICK RFQ

Specifications

Series NexFET™ FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 100A (Ta) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 6.4mOhm @ 16A, 10V Vgs(th) (Max) @ Id 3.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3870 pF @ 50 V FET Feature -
Power Dissipation (Max) 3.3W (Ta), 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Grade - Qualification -
Mounting Type Surface Mount Supplier Device Package 8-VSONP (5x6)
Package / Case 8-PowerTDFN

Related Products

CSD87333Q3D
CSD87333Q3D

MOSFET 2N-CH 30V 15A 8VSON

8-PowerTDFN View
CSD87312Q3E
CSD87312Q3E

MOSFET 2N-CH 30V 27A 8VSON

8-PowerTDFN View
CSD87334Q3DT
CSD87334Q3DT

MOSFET 2N-CH 30V 8VSON

8-PowerTDFN View
CSD87333Q3DT
CSD87333Q3DT

MOSFET 2N-CH 30V 15A 8VSON

8-PowerTDFN View