Download Datasheet

STB12NM60N-1

STMicroelectronics OEM P/N：STB12NM60N-1
rohs compliant MOSFET N-CH 600V 10A I2PAK

6,980 pcs

N/A

TO-262-3 Long Leads, I²Pak, TO-262AA

Price: N/A
QUICK RFQ

Specifications

Series MDmesh™ II FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 410mOhm @ 5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30.5 nC @ 10 V Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 960 pF @ 50 V FET Feature -
Power Dissipation (Max) 90W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Grade - Qualification -
Mounting Type Through Hole Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA

Related Products

TLP140G-1
TLP140G-1

THYRISTOR 100A TO262-3

TO-262-3 Long Leads, I²Pak, TO-262AA View
TLP200G-1
TLP200G-1

THYRISTOR 100A TO262-3

TO-262-3 Long Leads, I²Pak, TO-262AA View
TLP270G-1
TLP270G-1

THYRISTOR 100A TO262-3

TO-262-3 Long Leads, I²Pak, TO-262AA View
T1235-600R
T1235-600R

TRIAC ALTERNISTOR 600V 12A I2PAK

TO-262-3 Long Leads, I²Pak, TO-262AA View