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STB11NM60-1

STMicroelectronics OEM P/N：STB11NM60-1
rohs compliant MOSFET N-CH 650V 11A I2PAK

16,220 pcs

N/A

TO-262-3 Long Leads, I²Pak, TO-262AA

Price: N/A
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Specifications

Series MDmesh™ FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 450mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 25 V FET Feature -
Power Dissipation (Max) 160W (Tc) Operating Temperature -65°C ~ 150°C (TJ)
Grade - Qualification -
Mounting Type Through Hole Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA

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