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IRF630FP

STMicroelectronics OEM P/N:IRF630FP
rohs compliant MOSFET N-CH 200V 9A TO220FP

8,700 pcs

N/A

TO-220-3 Full Pack

Price: N/A
QUICK RFQ

Specifications

Series MESH OVERLAY™ II FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 400mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 25 V FET Feature -
Power Dissipation (Max) 30W (Tc) Operating Temperature -65°C ~ 150°C (TJ)
Grade - Qualification -
Mounting Type Through Hole Supplier Device Package TO-220FP
Package / Case TO-220-3 Full Pack

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