PHT6NQ10T,135

Nexperia OEM P/N：PHT6NQ10T,135
rohs compliant MOSFET N-CH 100V 3A SOT223

5,540 pcs

N/A

TO-261-4, TO-261AA

$0.3005 (For reference only.)
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Specifications

Series TrenchMOS™ FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 90mOhm @ 3A, 10V Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 633 pF @ 25 V FET Feature -
Power Dissipation (Max) 1.8W (Ta), 8.3W (Tc) Operating Temperature -65°C ~ 150°C (TJ)
Grade - Qualification -
Mounting Type Surface Mount Supplier Device Package SOT-223
Package / Case TO-261-4, TO-261AA

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