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IRF640

STMicroelectronics OEM P/N：IRF640
rohs compliant MOSFET N-CH 200V 18A TO220AB

20,570 pcs

N/A

TO-220-3

Price: N/A
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Specifications

Series MESH OVERLAY™ FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 9A, 10V Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1560 pF @ 25 V FET Feature -
Power Dissipation (Max) 125W (Tc) Operating Temperature 150°C (TJ)
Grade - Qualification -
Mounting Type Through Hole Supplier Device Package TO-220
Package / Case TO-220-3

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