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SCT30N120H

STMicroelectronics OEM P/N：SCT30N120H
rohs compliant SICFET N-CH 1200V 40A H2PAK-2

11,120 pcs

N/A

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

$14.031 (For reference only.)
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Specifications

Series - FET Type N-Channel
Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc) Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 100mOhm @ 20A, 20V Vgs(th) (Max) @ Id 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 105 nC @ 20 V Vgs (Max) +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 400 V FET Feature -
Power Dissipation (Max) 270W (Tc) Operating Temperature -55°C ~ 200°C (TJ)
Grade - Qualification -
Mounting Type Surface Mount Supplier Device Package H2Pak-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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