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SCT040HU65G3AG

STMicroelectronics OEM P/N：SCT040HU65G3AG
AUTOMOTIVE-GRADE SILICON CARBIDE

8,200 pcs

N/A

TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

$1.00 (For reference only.)
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Specifications

Series - FET Type N-Channel
Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Rds On (Max) @ Id, Vgs 55mOhm @ 20A, 18V Vgs(th) (Max) @ Id 4.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 39.5 nC @ 18 V Vgs (Max) +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds 920 pF @ 400 V FET Feature -
Power Dissipation (Max) 221W (Tc) Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive Qualification AEC-Q101
Mounting Type Surface Mount Supplier Device Package HU3PAK
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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