Download Datasheet

CSD19538Q2

Texas Instruments OEM P/N：CSD19538Q2
rohs compliant MOSFET N-CH 100V 14.4A 6WSON

24,050 pcs

N/A

6-WDFN Exposed Pad

$0.1597 (For reference only.)
QUICK RFQ

Specifications

Series NexFET™ FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 14.4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 59mOhm @ 5A, 10V Vgs(th) (Max) @ Id 3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.6 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 454 pF @ 50 V FET Feature -
Power Dissipation (Max) 2.5W (Ta), 20.2W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Grade - Qualification -
Mounting Type Surface Mount Supplier Device Package 6-WSON (2x2)
Package / Case 6-WDFN Exposed Pad

Related Products

TVS3300DRVR
TVS3300DRVR

33V PRECISION SURGE PROTECTION

6-WDFN Exposed Pad View
TVS0500DRVR
TVS0500DRVR

UNIDIR PRECISION SURGE DIODE

6-WDFN Exposed Pad View
TVS1800DRVR
TVS1800DRVR

UNIDIR PRECISION SURGE DIODE

6-WDFN Exposed Pad View
TVS2200DRVR
TVS2200DRVR

UNIDIR PRECISION SURGE DIODE

6-WDFN Exposed Pad View