Download Datasheet

CSD19537Q3

Texas Instruments OEM P/N：CSD19537Q3
rohs compliant MOSFET N-CH 100V 9.7A/50A 8VSON

10,310 pcs

N/A

8-PowerTDFN

$0.4627 (For reference only.)
QUICK RFQ

Specifications

Series NexFET™ FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 50A (Ta) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 14.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1680 pF @ 50 V FET Feature -
Power Dissipation (Max) 2.8W (Ta), 83W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Grade - Qualification -
Mounting Type Surface Mount Supplier Device Package 8-VSON-CLIP (3.3x3.3)
Package / Case 8-PowerTDFN

Related Products

CSD87333Q3D
CSD87333Q3D

MOSFET 2N-CH 30V 15A 8VSON

8-PowerTDFN View
CSD87312Q3E
CSD87312Q3E

MOSFET 2N-CH 30V 27A 8VSON

8-PowerTDFN View
CSD87334Q3DT
CSD87334Q3DT

MOSFET 2N-CH 30V 8VSON

8-PowerTDFN View
CSD87333Q3DT
CSD87333Q3DT

MOSFET 2N-CH 30V 15A 8VSON

8-PowerTDFN View