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XP65SL190DI

YAGEO OEM P/N：XP65SL190DI
rohs compliant MOSFET N-CH 650V 20A TO220CFM

19,240 pcs

N/A

TO-220-3 Full Pack

$8.9625 (For reference only.)
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Specifications

Series XP65SL190D FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 6.2A, 10V Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 92.8 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs 92.8 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3312 pF @ 100 V
FET Feature - Power Dissipation (Max) 1.92W (Ta), 34.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Grade -
Qualification - Mounting Type Through Hole
Supplier Device Package TO-220CFM Package / Case TO-220-3 Full Pack

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